High Brightness InP Micropillars Grown on Silicon with Fermi Level Splitting Larger than 1 eV-Reference-Cited by-同舟云学术

High Brightness InP Micropillars Grown on Silicon with Fermi Level Splitting Larger than 1 eV

Published:2014-05-19 Issue:6 Volume:14 Page:3235-3240
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tran Thai-Truong D.¹,Sun Hao¹²,Ng Kar Wei¹,Ren Fan¹,Li Kun¹,Lu Fanglu¹,Yablonovitch Eli¹,Chang-Hasnain Constance J.¹

Affiliation:

1. Applied Science and Technology Group and Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, United States

2. Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl500621j

Reference35 articles.

1. The value of module efficiency in lowering the levelized cost of energy of photovoltaic systems

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4. Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

5. Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon

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