Negative Differential Resistance in Spin-Crossover Molecular Devices-Reference-Cited by-同舟云学术

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Negative Differential Resistance in Spin-Crossover Molecular Devices

Published:2022-08-09 Issue:32 Volume:13 Page:7514-7520
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Li Dongzhe¹²^ORCID,Tong Yongfeng³,Bairagi Kaushik³,Kelai Massine³,Dappe Yannick J.⁴,Lagoute Jérôme³^ORCID,Girard Yann³^ORCID,Rousset Sylvie³,Repain Vincent³,Barreteau Cyrille⁴,Brandbyge Mads¹⁵^ORCID,Smogunov Alexander⁴,Bellec Amandine³^ORCID

Affiliation:

1. Department of Physics, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark

2. CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, F-31055 Toulouse, France

3. Université Paris Cité, CNRS, Laboratoire Matériaux et Phénomènes Quantiques UMR7162, 75013 Paris, France

4. Université Paris-Saclay, CEA, CNRS, SPEC, 91191 Gif-sur-Yvette, France

5. Center for Nanostructured Graphene, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark

Funder

Danmarks Grundforskningsfond

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.2c01934

Reference42 articles.

1. Electronic Structure, Spin-States, and Spin-Crossover Reaction of Heme-Related Fe-Porphyrins: A Theoretical Perspective

2. Molecular spin crossover phenomenon: recent achievements and prospects

3. Charge Transport and Electrical Properties of Spin Crossover Materials: Towards Nanoelectronic and Spintronic Devices

4. Spin Crossover Nanomaterials: From Fundamental Concepts to Devices

5. Resistance switching in large-area vertical junctions of the molecular spin crossover complex [Fe(HB(tz)3)2]: ON/OFF ratios and device stability

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Global Optimization of a Spin-Crossover Molecule on Monolayer MoS₂: Spin Transition-Induced Band Edge Shift;The Journal of Physical Chemistry C;2024-09-14

2. Negative Differential Resistance in Single‐Molecule Junctions Based on Heteroepitaxial Spherical Au/Pt Nanogap Electrodes;Advanced Electronic Materials;2024-06-16

3. Charge and spin thermoelectric transport in benzene-based molecular nano-junctions: a quantum many-body study;Nanoscale;2024

4. Voltage-induced modulation of the magnetic exchange in binuclear Fe(iii) complex deposited on Au(111) surface;Dalton Transactions;2024

5. Large Tunneling Electroresistance, Tunneling Magnetoresistance, and Regulatable Negative Differential Conductance in a van der Waals Antiferroelectric Multiferroic Tunnel Junction;Physical Review Applied;2023-09-07

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