Tolerance to Stretching in Thiol-Terminated Single-Molecule Junctions Characterized by Surface-Enhanced Raman Scattering-Reference-Cited by-同舟云学术

Tolerance to Stretching in Thiol-Terminated Single-Molecule Junctions Characterized by Surface-Enhanced Raman Scattering

Published:2020-07-03 Issue:16 Volume:11 Page:6712-6717
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Kobayashi S.¹,Kaneko S.¹²^ORCID,Kiguchi M.¹^ORCID,Tsukagoshi K.³^ORCID,Nishino T.¹^ORCID

Affiliation:

1. Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1 W4-10 Ookayama, Meguro-ku, Tokyo 152-8551, Japan

2. JST PRESTO, 4-1-8 Honcho, Kawaguchi 332-0012, Japan

3. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Tsukuba, Ibaraki 305-0044, Japan

Funder

Core Research for Evolutional Science and Technology

Precursory Research for Embryonic Science and Technology

Japan Society for the Promotion of Science

Iketani Science and Technology Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.0c01526

Reference44 articles.

1. Single-molecule electronics: from chemical design to functional devices

2. HOMO Level Pinning in Molecular Junctions: Joint Theoretical and Experimental Evidence

3. Charge transport in a single molecule transistor probed by scanning tunneling microscopy

4. Single-molecule junctions beyond electronic transport

5. Mechanically controlled molecular orbital alignment in single molecule junctions

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