Phase-Field Modeling of Chemical Vapor-Deposited 2D MoSe<sub>2</sub> Domains with Varying Morphology for Electronic Devices and Catalytic Applications-Reference-Cited by-同舟云学术

Phase-Field Modeling of Chemical Vapor-Deposited 2D MoSe₂ Domains with Varying Morphology for Electronic Devices and Catalytic Applications

Published:2022-10-05 Issue:10 Volume:5 Page:15488-15497
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Roy Anupam¹²^ORCID,Pramanik Tanmoy³^ORCID,Chowdhury Sayema¹^ORCID,Banerjee Sanjay K.¹

Affiliation:

1. Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas78758, United States

2. Department of Physics, Birla Institute of Technology Mesra, Ranchi, Jharkhand835215, India

3. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand247667, India

Funder

Science and Engineering Research Board

Army Research Office

Semiconductor Research Corporation

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c03472

Reference65 articles.

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4. Flat transistors get off the ground

5. MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

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