Universal Substrate-Trapping Strategy To Grow Strictly Monolayer Transition Metal Dichalcogenides Crystals
Author:
Affiliation:
1. College of Chemistry and Molecular Science, Wuhan University, Wuhan 430072, China
2. IFW Dresden, P.O. Box 270116, 01069 Dresden, Germany
Funder
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.7b01984
Reference33 articles.
1. Atomically ThinMoS2: A New Direct-Gap Semiconductor
2. Emerging Photoluminescence in Monolayer MoS2
3. Mobility engineering and a metal–insulator transition in monolayer MoS2
4. Single-layer MoS2 transistors
5. Spin and pseudospins in layered transition metal dichalcogenides
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