Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon-Reference-Cited by-同舟云学术

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon

Published:2016-05-09 Issue:10 Volume:28 Page:3265-3275
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Beyer Andreas¹,Stegmüller Andreas²,Oelerich Jan O.¹,Jandieri Kakhaber¹,Werner Katharina¹,Mette Gerson¹,Stolz Wolfgang¹,Baranovskii Sergei D.¹,Tonner Ralf²,Volz Kerstin¹

Affiliation:

1. Faculty of Physics and Material Sciences Centre, Philipps-Universität Marburg, Hans-Meerwein Straße 6, D-35032 Marburg, Germany

2. Faculty of Chemistry and Material Sciences Centre, Philipps-Universität Marburg, Hans-Meerwein Straße 4, D-35032 Marburg, Germany

Funder

Deutsche Forschungsgemeinschaft

Beilstein-Institut zur Förderung der Chemischen Wissenschaften

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.5b04896

Reference65 articles.

1. Cramming More Components Onto Integrated Circuits

2. International Technology Roadmap for Semiconductors.http://www.itrs.net/reports.html(accessed May 20, 2015) .

3. High dielectric constant gate oxides for metal oxide Si transistors

4. Nanolasers grown on silicon

5. Nanometre-scale electronics with III–V compound semiconductors

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stability of monodomain III-V crystals and antiphase boundaries over a Si monoatomic step;Applied Surface Science;2024-12

2. Determination of III-V/Si absolute interface energies: Impact on wetting properties;Physical Review B;2023-08-21

3. Systematic strain-induced bandgap tuning in binary III–V semiconductors from density functional theory;Physica Scripta;2023-05-23

4. Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket;Photonics;2023-05-06

5. Development and applications of ultrafast transmission electron microscopy;Microscopy;2023-03-24