Influence of Compensating Defect Formation on the Doping Efficiency and Thermoelectric Properties of Cu2-ySe1–xBrx

Author:

Day Tristan W.1,Weldert Kai S.23,Zeier Wolfgang G.4,Chen Bor-Rong4,Moffitt Stephanie L.4,Weis Ulrike5,Jochum Klaus P.5,Panthöfer Martin2,Bedzyk Michael J.4,Snyder G. Jeffrey14,Tremel Wolfgang2

Affiliation:

1. Department of Applied Physics and Material Science, California Institute of Technology, Pasadena, California 91125, United States

2. Institut für Anorganische Chemie und Analytische Chemie der Johannes Gutenberg-Universität, Duesbergweg 10-14, D-55128 Mainz, Germany

3. Graduate School Materials Science in Mainz, Johannes Gutenberg-Universität, Staudingerweg 9, 55128 Mainz, Germany

4. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States

5. Biogeochemistry Department, Max Planck Institute for Chemistry, P.O. Box 3060, D-55020 Mainz, Germany

Funder

Deutsche Forschungsgemeinschaft

Basic Energy Sciences

Air Force Office of Scientific Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

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