Cobalt Metal ALD: Understanding the Mechanism and Role of Zinc Alkyl Precursors as Reductants for Low-Resistivity Co Thin Films-Reference-Cited by-同舟云学术

Cobalt Metal ALD: Understanding the Mechanism and Role of Zinc Alkyl Precursors as Reductants for Low-Resistivity Co Thin Films

Published:2021-06-18 Issue:13 Volume:33 Page:5045-5057
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Zanders David¹²^ORCID,Liu Ji³^ORCID,Obenlüneschloß Jorit¹,Bock Claudia⁴^ORCID,Rogalla Detlef⁵,Mai Lukas¹^ORCID,Nolan Michael³^ORCID,Barry Seán T.²^ORCID,Devi Anjana¹^ORCID

Affiliation:

1. Inorganic Materials Chemistry, Ruhr University Bochum, Universitätsstr. 150, Bochum 44801 Germany

2. Department of Chemistry, Carleton University, 1125 Colonel By Drive, Ottawa, Ontario K1S 5B6 Canada

3. Tyndall National Institute, University College Cork, Lee Maltings, Cork T12 R5CP, Ireland

4. Microsystems Technology, Ruhr University Bochum, Universitätsstr. 150, Bochum 44801 Germany

5. RUBION, Ruhr University Bochum, Universitätsstr. 150, Bochum 44801 Germany

Funder

Bundesministerium fÃ¼r Bildung und Forschung

Deutscher Akademischer Austauschdienst

Science Foundation Ireland

Deutsche Forschungsgemeinschaft

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.1c00877

Reference68 articles.

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4. Bekiaris, N.; Wu, Z.; Ren, H.; Naik, M.; Park, J. H.; Lee, M.; Ha, T. H.; Hou, W.; Bakke, J. R.; Gage, M.; Cobalt fill for advanced interconnects. IEEE International Interconnect Technology Conference (IITC), 2017; pp 1–3.

5. Hung, R.; Park, J. H.; Ha, T. H.; Lee, M.; Hou, W.; Lei, J.; Bakke, J. R.; Sharma, S.; Sharma, K. R.; Kim, N. S.; Extreme Contact Scaling with Advanced Metallization of Cobalt. IEEE International Interconnect Technology Conference (IITC), 2018; pp 30–32.

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