Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors-Reference-Cited by-同舟云学术

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors

Author:

Zou Xuming¹,Liu Xingqiang¹,Wang Chunlan¹,Jiang Ying²,Wang Yong²,Xiao Xiangheng¹,Ho Johnny C.³,Li Jinchai¹,Jiang Changzhong¹,Xiong Qihua⁴,Liao Lei¹

Affiliation:

1. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China

2. Department of Materials Sciences & Engineering, Zhejiang University, Hangzhou 310058, China

3. Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China

4. Department of Physics, Nanyang Technological University, Singapore 639798

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference36 articles.

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