Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy-Reference-Cited by-同舟云学术

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

Published:2018-02-21 Issue:2 Volume:3 Page:2111-2118
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Cheng Chiu-Ping¹^ORCID,Chen Wan-Sin²,Cheng Yi-Ting²,Wan Hsien-Wen²,Yang Cheng-Yeh³,Pi Tun-Wen⁴,Kwo Jueinai³,Hong Minghwei²

Affiliation:

1. Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan, ROC

2. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan, ROC

3. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC

4. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan, ROC

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acsomega.7b01564

Reference37 articles.

1. Conformal Coating on Ultrahigh-Aspect-Ratio Nanopores of Anodic Alumina by Atomic Layer Deposition

2. Ritala, M.; Leskela, M.Handbook of Thin Film Materials;Academic:New York, 2002; Vol.1, p103.

3. Surface treatment for the atomic layer deposition of HfO2 on silicon

4. Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications

5. Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

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