Fabrication of Unipolar Graphene Field-Effect Transistors by Modifying Source and Drain Electrode Interfaces with Zinc Porphyrin-Reference-Cited by-同舟云学术

Fabrication of Unipolar Graphene Field-Effect Transistors by Modifying Source and Drain Electrode Interfaces with Zinc Porphyrin

Published:2012-02-28 Issue:3 Volume:4 Page:1434-1439
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Khaderbad Mrunal A.¹,Tjoa Verawati²³,Rao Manohar²,Phandripande Rohit¹,Madhu Sheri⁴,Wei Jun³,Ravikanth Mangalampalli⁴,Mathews Nripan²,Mhaisalkar Subodh G.²,Rao V. Ramgopal¹

Affiliation:

1. Centre of Excellence in Nanoelectronics, IIT Bombay, Mumbai 400076, Maharashtra, India

2. School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798

3. Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075

4. Department of Chemistry, IIT Bombay, Mumbai 400076, Maharashtra, India

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am201691s

Reference42 articles.

1. Graphene and Graphene Oxide: Synthesis, Properties, and Applications

2. The structure of suspended graphene sheets

3. Synthesis of Water Soluble Graphene

4. The chemistry of graphene oxide

5. Graphene-based nanomaterials for energy storage

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