Properties of Cu(thd)2 as a Precursor to Prepare Cu/SiO2 Catalyst Using the Atomic Layer Epitaxy Technique-Reference-Cited by-同舟云学术

Properties of Cu(thd)2 as a Precursor to Prepare Cu/SiO2 Catalyst Using the Atomic Layer Epitaxy Technique

Published:2006-11-29 Issue:50 Volume:128 Page:15950-15951
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Chen Ching S.¹,Lin Jarrn H.¹,You Jainn H.¹,Chen Chi R.¹

Affiliation:

1. Center for General Education, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan Tao-Yuan, Taiwan 333, Republic of China, Department of Material Science, National University of Tainan, 33, Sec. 2, Shu-Lin Street, Tainan, Taiwan 700, Republic of China, and Department of Chemical and Materials Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan Tao-Yuan, Taiwan 333, Republic of China

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja063083d

Reference22 articles.

1. Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

2. Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications

3. Dehydrogenation of i-butane on CrOx/Al2O3 catalysts prepared by ALE and impregnation techniques

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