Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

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Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors

Published:2014-08-08 Issue:16 Volume:6 Page:13496-13501
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yoon Seokhyun¹,Tak Young Jun¹,Yoon Doo Hyun¹,Choi Uy Hyun¹,Park Jin-Seong²,Ahn Byung Du¹,Kim Hyun Jae¹

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea

2. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seoul 133-719, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am502571w

Reference35 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Material characteristics and applications of transparent amorphous oxide semiconductors

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Recent advances in low-temperature solution-processed oxide backplanes

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