Direct Spectroscopic Evidence for the Formation of One-Dimensional Wetting Wires During the Growth of InGaAs/GaAs Quantum Dot Chains-Reference-Cited by-同舟云学术

Direct Spectroscopic Evidence for the Formation of One-Dimensional Wetting Wires During the Growth of InGaAs/GaAs Quantum Dot Chains

Published:2006-08-09 Issue:9 Volume:6 Page:1847-1851
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Wang Xiaoyong¹,Wang Zhiming M.¹,Liang Baolai¹,Salamo Gregory J.¹,Shih Chih-Kang¹

Affiliation:

1. Department of Physics, the University of Texas at Austin, Austin, Texas 78712, and Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl060271t

Reference19 articles.

1. Epitaxially Self-Assembled Quantum Dots

2. Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs

3. InGaAs/GaAs three-dimensionally-ordered array of quantum dots

4. Control on self-organization of InGaAs/GaAs(100) quantum-dot chains

5. Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation

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