Defect-Driven Radioluminescence Sensitization in Scintillators: The Case of Lu2Si2O7:Pr
Author:
Affiliation:
1. Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via Cozzi 53, 20125 Milano, Italy
2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp407248q
Reference34 articles.
1. Scintillator materials
2. Composition Engineering in Cerium-Doped (Lu,Gd)3(Ga,Al)5O12 Single-Crystal Scintillators
3. Structure–Property Correlations in a Ce-Doped (Lu,Gd)2SiO5:Ce Scintillator
4. Study of the radioluminesence spectra of doped silica optical fibre dosimeters for stem effect removal
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