Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on Bare C-Plane Sapphire
Author:
Affiliation:
1. International Centre for Material Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg200749w
Reference24 articles.
1. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays
2. Dislocation Filtering in GaN Nanostructures
3. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
4. Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate
5. Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy
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