Direct Observation of Interfacial Morphology in Poly(3-hexylthiophene) Transistors: Relationship between Grain Boundary and Field-Effect Mobility-Reference-Cited by-同舟云学术

Direct Observation of Interfacial Morphology in Poly(3-hexylthiophene) Transistors: Relationship between Grain Boundary and Field-Effect Mobility

Published:2009-12-22 Issue:1 Volume:2 Page:48-53
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Choi Danbi¹,Jin Sangwoo¹,Lee Youngmin¹,Kim Se Hyun¹,Chung Dae Sung¹,Hong Kipyo¹,Yang Chanwoo¹,Jung Jungwoon¹,Kim Jin Kon¹,Ree Moonhor¹,Park Chan Eon¹

Affiliation:

1. Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea, Department of Chemistry, National Research Lab for Polymer Synthesis & Physics, Pohang Accelerator Laboratory, Center for Electro-Photo Behaviors in Advanced Molecular Systems, Division of Advanced Materials Science, Polymer Research Institute, BK School of Molecular Science, and Pohang University of Science and Technology, Pohang, 790-794, Korea, and National Creative...

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am9005385

Reference27 articles.

1. Two-dimensional charge transport in self-organized, high-mobility conjugated polymers

2. Liquid-crystalline semiconducting polymers with high charge-carrier mobility

3. High Carrier Mobility Polythiophene Thin Films: Structure Determination by Experiment and Theory

4. Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors

5. Soluble and processable regioregular poly(3‐hexylthiophene) for thin film field‐effect transistor applications with high mobility

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