Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements-Reference-Cited by-同舟云学术

Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements

Published:2008-08-08 Issue:9 Volume:8 Page:3056-3059
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Richter T.¹,Meijers H. Lüth R.¹,Calarco R.¹,Marso M.¹

Affiliation:

1. Institute of Bio- and Nanosystems, IBN-1 and cni-Centre of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl8014395

Reference15 articles.

1. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

2. Nanowire Ultraviolet Photodetectors and Optical Switches

3. Semiconductor Nanowires for Subwavelength Photonics Integration

4. Vertical wrap-gated nanowire transistors

5. In2O3 nanowires as chemical sensors

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