Atomic Layer Deposition of HfO2 Thin Films Exploiting Novel Cyclopentadienyl Precursors at High Temperatures-Reference-Cited by-同舟云学术

Atomic Layer Deposition of HfO2 Thin Films Exploiting Novel Cyclopentadienyl Precursors at High Temperatures

Published:2007-06-01 Issue:13 Volume:19 Page:3319-3324
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Niinistö Jaakko¹,Putkonen Matti¹,Niinistö Lauri¹,Song Fuquan¹,Williams Paul¹,Heys Peter N.¹,Odedra Rajesh¹

Affiliation:

1. Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, FI-02015 Espoo, Finland, Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, United Kingdom, and Beneq OY, Ensimmäinen savu, FI-01510 Vantaa, Finland

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm0626583

Reference28 articles.

1. Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials

2. Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

3. Houssa M.; Heyns, M. M. InHigh-k Gate Dielectrics; Houssa, M., Ed.; Institute of Physics Publishing: Bristol, UK, 2004; pp 3−13.

4. International Technology Roadmap for Semiconductors,Front EndProcesses(2005)http://public.itrs.net/.

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