Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO<sub>2</sub> for High Aspect Ratio Through-Silicon Via Technology in 3D Integration-Reference-Cited by-同舟云学术

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO₂ for High Aspect Ratio Through-Silicon Via Technology in 3D Integration

Published:2024-03-14 Issue:3 Volume:6 Page:2011-2018
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zeb Gul¹^ORCID,Nguyen Tien Dat²^ORCID,Giang Thi Phuong Ly³,Le Xuan Tuan⁴^ORCID

Affiliation:

1. Sheba Microsystems, 47B Coldwater Road, Toronto, Ontario M3B 1Y8, Canada

2. Chemical Engineering, Polytechnique Montréal, C.P. 6079, Succ. CV, Montréal, Québec H3C 3A7, Canada

3. School of Chemistry and Life Sciences (SCLS), Hanoi University of Science and Technology (HUST), 1 Dai Co Viet road, Hai Ba Trung district, Hanoi 100000, Vietnam

4. Innovation DIC Chimitroniques Inc. (DIC Corporation), 725 rue Trotter, St-Jean-sur-Richelieu, Quebec J3B 8J8, Canada

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00062

Reference40 articles.

1. Simulation study and parameter optimization of laser TSV using artificial neural networks

2. Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications

3. Activation of amino-based monolayers for electroless metallization of high-aspect-ratio through-silicon vias by using a simple ultrasonic-assisted plating solution

4. Formation of electroless barrier and seed layers in a high aspect ratio through-Si vias using Au nanoparticle catalyst for all-wet Cu filling technology

5. Electroless Ni–B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package