Investigation on the Bandgap-Adjustable (Ga<sub>1–<i>x</i></sub>In<sub><i>x</i></sub>)<sub>2</sub>O<sub>3</sub> Film Prepared by Magnetron Sputtering-Reference-Cited by-同舟云学术

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Investigation on the Bandgap-Adjustable (Ga_1–xIn_x)₂O₃ Film Prepared by Magnetron Sputtering

Published:2024-02-27 Issue:3 Volume:6 Page:1858-1871
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lin Tao¹²^ORCID,Xie Chaoyang¹,Yang Sha¹,Xie Jianan¹,Liu Yantao¹,Chen Sui¹,Huang Haoxiang¹,Dang Jiale¹,Huang Rong¹,Duan Yupeng³

Affiliation:

1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China

2. Shannxi Key Laboratory of Complex System Control and Intelligent Information Processing, Xi’an University of Technology, Xi’an 710048, China

3. School of Physics, Northwest University, Xi’an 710069, China

Funder

Education Department of Shaanxi Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01776

Reference35 articles.

1. Recent progress on performance-enhancing strategies in flexible photodetectors: From structural engineering to flexible integration

2. Ga₂O₃–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

3. Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors

4. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

5. Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition

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