Tunable Ferroelectric Properties in Wurtzite (Al<sub>0.8</sub>Sc<sub>0.2</sub>)N via Crystal Anisotropy-Reference-Cited by-同舟云学术

Tunable Ferroelectric Properties in Wurtzite (Al_0.8Sc_0.2)N via Crystal Anisotropy

Published:2022-10-24 Issue:11 Volume:4 Page:5165-5170
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yasuoka Shinnosuke¹,Mizutani Ryoichi¹,Ota Reika¹,Shiraishi Takahisa¹,Shimizu Takao²³^ORCID,Uehara Masato⁴^ORCID,Yamada Hiroshi⁴,Akiyama Morito⁴,Funakubo Hiroshi¹⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama226-8502, Japan

2. Research Center for Functional Materials, National Institute for Materials Science, Tsukuba305-0044, Japan

3. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi-shi, Saitama332-0012, Japan

4. Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tosu841-0052, Japan

5. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama226-8502, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00999

Reference30 articles.

1. Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

2. AlScN: A III-V semiconductor based ferroelectric

3. Ferroelectricity in boron-substituted aluminum nitride thin films

4. Demonstration of ferroelectricity in ScGaN thin film using sputtering method

5. Ferroelectrics everywhere: Ferroelectricity in magnesium substituted zinc oxide thin films

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