Selective Crystallization of Ferroelectric HfxZr1–xO2 via Excimer Laser Annealing-Reference-Cited by-同舟云学术

Selective Crystallization of Ferroelectric Hf_xZr_1–xO₂ via Excimer Laser Annealing

Published:2023-01-09 Issue:1 Volume:5 Page:117-122
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Song Myeong Seop¹^ORCID,Park Kunwoo²,Lee Kyoungjun¹^ORCID,Cho Jung Woo¹,Lee Tae Yoon¹^ORCID,Park Jungwon²³^ORCID,Chae Seung Chul¹^ORCID

Affiliation:

1. Department of Physics Education, Seoul National University, Seoul08826, Republic of Korea

2. School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul08826, Korea

3. Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul08826, Korea

Funder

Korea Semiconductor Research Consortium

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01555

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5. Scale-free ferroelectricity induced by flat phonon bands in HfO2

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