Epitaxial BaTiO3 on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer
Author:
Affiliation:
1. Centre for Nanoscience and Engineering, Indian Institute of Science, Bangalore 560012, India
2. Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore 560012, India
Funder
Ministry of Electronics and Information technology
Department of Science and Technology, Ministry of Science and Technology
Ministry of Human Resource Development
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00842
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1. Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
2. Giant tunnel electroresistance for non-destructive readout of ferroelectric states
3. Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon
4. A strong electro-optically active lead-free ferroelectric integrated on silicon
5. Strain Tuning of Ferroelectric Thin Films
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