Al2O3-Induced Sub-Gap Doping on the IGZO Channel for the Detection of Infrared Light

Author:

Kim Jaeun1,Kim Tae Hyeon1,Oh Seyoung1,Nam Jae Hyeon1,Jang Hye Yeon1,Kim Yonghun2,Yamada Naohito3,Kobayashi Hikaru3,Kim So-Young45,Lee Byoung Hun45ORCID,Habazaki Hiroki36ORCID,Park Woojin1,Cho Byungjin1ORCID

Affiliation:

1. Department of Advanced Materials Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea

2. Materials Center for Energy Convergence, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea

3. Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan

4. Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea

5. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Cheomdan-gwagiro 123, Buk-gu, Gwangju 61005, Korea

6. Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan

Funder

Samsung

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Chungbuk National University

Korea Institute for Advancement of Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

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