Electron Doping-Induced Metal–Insulator Transition in LaNiO3 and Memory Devices
Author:
Affiliation:
1. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
2. X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439 United States
Funder
Air Force Office of Scientific Research
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00242
Reference44 articles.
1. Progress in perovskite nickelate research
2. Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping
3. Correlated memory resistor in epitaxial NdNiO3 heterostructures with asymmetrical proton concentration
4. Proton-doped strongly correlated perovskite nickelate memory devices
5. Correlation between Ni Valence and Resistance Modulation on a SmNiO3 Chemical Transistor
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