Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn<sub>3</sub>N<sub>2</sub> Films on a Glass Substrate-Reference-Cited by-同舟云学术

Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn₃N₂ Films on a Glass Substrate

Published:2022-04-11 Issue:4 Volume:4 Page:2026-2031
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Li Kaiwen¹²,Shimizu Atsushi²,He Xinyi²,Ide Keisuke²^ORCID,Hanzawa Kota²^ORCID,Matsuzaki Kosuke³^ORCID,Katase Takayoshi²^ORCID,Hiramatsu Hidenori²³^ORCID,Hosono Hideo³^ORCID,Zhang Qun¹,Kamiya Toshio²³

Affiliation:

1. Department of Materials Science, National Engineering Laboratory for TFT-LCD Materials and Technologies, Fudan University, 2005 Songhu Road, Yangpu District, Shanghai 200438, China

2. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan

3. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

China Scholarship Council

Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00181