Resistive Switching Observation in a Gallium-Based Liquid Metal/Graphene Junction-Reference-Cited by-同舟云学术

Resistive Switching Observation in a Gallium-Based Liquid Metal/Graphene Junction

Published:2020-09-14 Issue:10 Volume:2 Page:3093-3099
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Gutiérrez Diego¹,de Sousa Jesús Alejandro¹²^ORCID,Mas-Torrent Marta¹^ORCID,Crivillers Núria¹^ORCID

Affiliation:

1. Molecular Nanoscience and Organic Materials Department, Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB s/n, Bellaterra 081093, Spain

2. Laboratorio de Electroquímica, Departamento de Química, Facultad de Ciencias, Universidad de los Andes, 5101 Mérida, Venezuela

Funder

Ministerio de Ciencia, Innovaci?n y Universidades

Ministerio de Econom?a y Competitividad

Generalitat de Catalunya

Instituto de Salud Carlos III

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00296

Reference42 articles.

1. Point contact resistive switching memory based on self-formed interface of Al/ITO

2. Artificial Synapse Emulated by Charge Trapping-Based Resistive Switching Device

3. Nanoscale resistive switching memory devices: a review

4. Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review

5. In Situ Observation of Resistive Switching in an Asymmetric Graphene Oxide Bilayer Structure

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