Self-Assembled Naphthalimide Nanoparticles for Nonvolatile ReRAM Devices: An Efficient Approach toward High Performance Solution-Processed and All-Organic Two-Terminal Resistive Memory Devices-Reference-Cited by-同舟云学术

Self-Assembled Naphthalimide Nanoparticles for Nonvolatile ReRAM Devices: An Efficient Approach toward High Performance Solution-Processed and All-Organic Two-Terminal Resistive Memory Devices

Published:2019-10-27 Issue:11 Volume:1 Page:2437-2444
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Arunagirinathan Rahul Narasimhan¹^ORCID,Meher Niranjan²^ORCID,Iyer Parameswar Krishnan¹²^ORCID

Affiliation:

1. Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India

2. Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India

Funder

Science and Engineering Research Board

Department of Electronics and Information Technology, Ministry of Communications and Information Technology

Department of Science and Technology, Ministry of Science and Technology

Max-Planck-Gesellschaft

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00582

Reference66 articles.

1. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

2. Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire

3. Resistive switching study in HfO2based resistive memories by conductive atomic force microscopy in vacuum

4. Direct growth of TiO2nanotubes on transparent substrates and their resistive switching characteristics

5. Scaling behaviors for resistive memory switching in NiO nanowire devices

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