Validation of van der Waals Interface for Enhanced Resistive Switching Performance in Memristor by Using Topotactic Phase Transition Material-Reference-Cited by-同舟云学术

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Validation of van der Waals Interface for Enhanced Resistive Switching Performance in Memristor by Using Topotactic Phase Transition Material

Published:2024-09-13 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Su Rui¹²,Deng Yuheng²,Jiang Weichao¹,Duan Yufeng¹,Zhang Runqing¹,Xiao Ruizi¹,Shen Chenglin¹,Gong Mingxing³,Cheng Weiming¹^ORCID,Xu Jingping¹,Lai Peter To²,Miao Xiangshui¹

Affiliation:

1. School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China

2. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China

3. Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430078, China

Funder

Research Grants Council, University Grants Committee

National Key Research and Development Program of China

Fundamental Research Funds for the Central Universities

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01309

Reference26 articles.

1. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

2. P-type electrical contacts for 2D transition-metal dichalcogenides

3. Highly Stable HfO₂ Memristors through van der Waals Electrode Lamination and Delamination

4. A High‐Performance Ag/TiN/HfO _x /HfO _y /HfO _x /Pt Diffusive Memristor for Calibration‐Free True Random Number Generator

5. HfO 2 ‐Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri‐Layer HfO 2 /BiFeO 3 /HfO 2 Design

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