Two-Step Process using MOCVD and Thermal Oxidation to Obtain Pure-Phase Cu2O Thin Films Transistors-Reference-Cited by-同舟云学术

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Two-Step Process using MOCVD and Thermal Oxidation to Obtain Pure-Phase Cu2O Thin Films Transistors

Published:2021-12-20 Issue:1 Volume:4 Page:367-374
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Singh Vivek¹^ORCID,Sinha Jyoti¹,Avasthi Sushobhan¹^ORCID

Affiliation:

1. Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bangalore 560012, India

Funder

Ministry of Electronics and Information technology

Department of Science and Technology, Ministry of Science and Technology

Ministry of Human Resource Development

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01050

Reference51 articles.

1. Optical and structural properties of nanocrystalline copper oxide thin films prepared by activated reactive evaporation

2. Thin film deposition of Cu2O and application for solar cells

3. CVD Grown Cuprous Oxide Thin Film Based High Performance Chemiresistive Ammonia Gas Sensors

4. Growth-Temperature Dependent Unpassivated Oxygen Bonds Determine the Gas Sensing Abilities of Chemical Vapor Deposition-Grown CuO Thin Films

5. Precursor to Gas Sensor: A Detailed Study of the Suitability of Copper Complexes as an MOCVD Precursor and their Application in Gas Sensing

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1. High-performance of low temperature solution-processed P-channel CuGaO thin film transistors;Journal of Alloys and Compounds;2024-08

2. Influence of pH value of precursor on growth, structural, and optical properties of Cu2O thin films grown in Mist-CVD;Physica B: Condensed Matter;2024-05

3. Properties and Aging of Bottom-Contact CuO/Au Transmission Line Model (TLM) Structures;IEEE Transactions on Electron Devices;2024

4. Investigation of Vacancies Transport in the Bilayer of the Cu₂O_1–x/CuO_1–y Resistive Switching Device and Effect of Growth Temperature on Memristive Switching;ACS Applied Electronic Materials;2023-12-12

5. Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer;Solid-State Electronics;2023-12

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