Azo Anion Radical Complex of Rhodium as a Molecular Memory Switching Device: Isolation, Characterization, and Evaluation of Current–Voltage Characteristics-Reference-Cited by-同舟云学术

Azo Anion Radical Complex of Rhodium as a Molecular Memory Switching Device: Isolation, Characterization, and Evaluation of Current–Voltage Characteristics

Published:2012-04-04 Issue:15 Volume:134 Page:6520-6523
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Paul Nanda D.¹,Rana Utpal²,Goswami Sreetosh³,Mondal Tapan K.⁴,Goswami Sreebrata¹

Affiliation:

1. Department of Inorganic Chemistry, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India

2. Polymer Science Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India

3. Department of Electrical Engineering, Bengal Engineering and Science University, Howrah 711 103, India

4. Department of Chemistry, Jadavpur University, Jadavpur, Kolkata 700 032, India

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja212197s

Reference33 articles.

1. The missing memristor found

2. Memristor-The missing circuit element

3. Programmable polymer thin film and non-volatile memory device

4. Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

5. Nonvolatile Memory Elements Based on Organic Materials

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