Halide-Induced Self-Limited Growth of Ultrathin Nonlayered Ge Flakes for High-Performance Phototransistors-Reference-Cited by-同舟云学术

Halide-Induced Self-Limited Growth of Ultrathin Nonlayered Ge Flakes for High-Performance Phototransistors

Published:2018-09-14 Issue:40 Volume:140 Page:12909-12914
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Hu Xiaozong¹,Huang Pu²,Jin Bao¹,Zhang Xiuwen²^ORCID,Li Huiqiao¹^ORCID,Zhou Xing¹,Zhai Tianyou¹^ORCID

Affiliation:

1. State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China

2. Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology, Shenzhen University, Nanhai Avenue 3688, Shenzhen, Guangdong 518060, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.8b07383

Reference54 articles.

1. Electric Field Effect in Atomically Thin Carbon Films