Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon-Reference-Cited by-同舟云学术

Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon

Published:2015-10-05 Issue:40 Volume:7 Page:22315-22321
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hudait Mantu K.¹,Clavel Michael¹,Goley Patrick S.¹,Xie Yuantao²,Heremans Jean J.²

Affiliation:

1. Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States

2. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061, United States

Funder

Intel Corporation

Division of Electrical, Communications and Cyber Systems

Basic Energy Sciences

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b05814

Reference27 articles.

1. High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments

2. High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations

3. pMOSFET Performance Enhancement With Strained $ \hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Channels

4. Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs

5. GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

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