High On–Off Ratio Improvement of ZnO-Based Forming-Free Memristor by Surface Hydrogen Annealing-Reference-Cited by-同舟云学术

High On–Off Ratio Improvement of ZnO-Based Forming-Free Memristor by Surface Hydrogen Annealing

Published:2015-03-27 Issue:13 Volume:7 Page:7382-7388
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sun Yihui¹,Yan Xiaoqin¹,Zheng Xin¹,Liu Yichong¹,Zhao Yanguang¹,Shen Yanwei¹,Liao Qingliang¹,Zhang Yue¹²

Affiliation:

1. State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China

2. Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China

Funder

State Administration of Foreign Experts Affairs

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

Beijing Municipal Commission of Education

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b01080

Reference41 articles.

1. The missing memristor found

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4. Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires

5. Flexible Memristive Memory Array on Plastic Substrates

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