Study on the Photoresponse of Amorphous In–Ga–Zn–O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap-State Distribution and Device Simulation-Reference-Cited by-同舟云学术

Study on the Photoresponse of Amorphous In–Ga–Zn–O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap-State Distribution and Device Simulation

Published:2015-07-07 Issue:28 Volume:7 Page:15570-15577
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jang Jun Tae¹,Park Jozeph²,Ahn Byung Du³,Kim Dong Myong¹,Choi Sung-Jin¹,Kim Hyun-Suk⁴,Kim Dae Hwan¹

Affiliation:

1. School of Electrical Engineering, Kookmin University, Seoul 136-702, Republic of Korea

2. Department of Materials Science and Engineering, KAIST, Daejeon 305-338, Republic of Korea

3. School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea

4. Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, Republic of Korea

Funder

National Research Foundation of Korea

Research Fund, Chungnam National University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b04152

Reference30 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Overview of electroceramic materials for oxide semiconductor thin film transistors

4. Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways

5. 21.2:Distinguished Paper: 55-inch OLED TV using InGaZnO TFTs with WRGB Pixel Design

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