Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1–xHfxO2 Thin Film without Using Noble Metal Electrode
Author:
Affiliation:
1. Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang 790-784, Republic of Korea
Funder
Ministry of Science, ICT and Future Planning
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b04303
Reference25 articles.
1. Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
2. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory
3. Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film
4. Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors
5. Effect of crystallinity and nonstoichiometric region on dielectric properties of SrTiO3 films formed on Ru
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