Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface-Reference-Cited by-同舟云学术

Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface

Published:2016-01-12 Issue:3 Volume:8 Page:2120-2124
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Bär Marcus¹²³,Barreau Nicolas⁴,Couzinié-Devy François⁴,Weinhardt Lothar³⁵⁶⁷,Wilks Regan G.¹,Kessler John⁴,Heske Clemens³⁵⁶⁷

Affiliation:

1. Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany

2. Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany

3. Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003, United States

4. Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, Centre National de la Recherche Scientifique (CNRS), 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France

5. Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

6. ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany

7. Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology, Engesserstraße 18/20, 76128 Karlsruhe, Germany

Funder

Helmholtz Association

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b10614

Reference41 articles.

1. 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

2. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells

3. Solar Frontier K.K. Solar Frontier Sets Thin-Film PV World Record with 20.9% CIS Cell;Solar Frontier K.K.:Tokyo, Japan, April 2, 2014; http://www.solar-frontier.com/eng/news/2014/C031367.html(accessed Nov 2015) .

4. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

5. New Cd-free buffer layer deposited by PVD: In2S3 containing Na compounds

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