Interface-Engineered Resistive Switching: CeO2 Nanocubes as High-Performance Memory Cells

Author:

Younis Adnan1,Chu Dewei1,Mihail Ionsecu2,Li Sean1

Affiliation:

1. School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 New South Wales, Australia

2. Australian Nuclear Science and Technology Organization, New Illawarra Road, Lucas Heights, 2234 New South Wales, Australia

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Reference33 articles.

1. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Gao, B.; Yu, S.; Xu, N.; Liu, L. F.; Sun, B.; Liu, X. Y.; Han, R. Q.; Kang, J. F.; Yu, B.; Wang, Y. Y.Electron Devices Meeting, IEDM 2008; IEEE International:Bangalore, India, 2008; pp1–4.

4. Direct growth of TiO2nanotubes on transparent substrates and their resistive switching characteristics

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