Energetic, Electronic, and Optical Behavior of Intrinsic Charge Carrier-Trapping Defects in Ge-Doped ZnGa2O4: Insights from a DFT Study
Author:
Affiliation:
1. Theoretical Chemistry Section, Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085, India
2. Homi Bhabha National Institute, Mumbai 400 094, India
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c02631
Reference58 articles.
1. Cation-Deficiency-Induced Crystal-Site Engineering for ZnGa2O4:Mn2+ Thin Film
2. Multiple-Valence and Visible to Near-Infrared Photoluminescence of Manganese in ZnGa2O4: A First-Principles Study
3. Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
4. Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4
5. Nanosized ZnGa2O4:Cr3+ Spinels as Highly Luminescent Materials for Bioimaging
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