Highly Biaxially Strained Silicene on Au(111)-Reference-Cited by-同舟云学术

Highly Biaxially Strained Silicene on Au(111)

Published:2021-05-04 Issue:18 Volume:125 Page:9973-9980
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Nazzari Daniele¹^ORCID,Genser Jakob¹^ORCID,Ritter Viktoria¹^ORCID,Bethge Ole²,Bertagnolli Emmerich¹,Ramer Georg³^ORCID,Lendl Bernhard³^ORCID,Watanabe Kenji⁴^ORCID,Taniguchi Takashi⁵^ORCID,Rurali Riccardo⁶^ORCID,Kolíbal Miroslav⁷⁸^ORCID,Lugstein Alois¹^ORCID

Affiliation:

1. Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria

2. Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria

3. Institute of Chemical Technologies and Analytics, Technische Universität Wien, Getreidemarkt 9, 1060 Vienna, Austria

4. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

5. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

6. Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain

7. Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic

8. CEITEC BUT, Brno University of Technology, Purkyňova 123, 612 00 Brno, Czech Republic

Funder

Ministry of Education, Culture, Sports, Science and Technology

European Regional Development Fund

Austrian Science Fund

Ministerio de Econom?a y Competitividad

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Generalitat de Catalunya

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c11033

Reference48 articles.

1. Silicene field-effect transistors operating at room temperature

2. Silicene transistors

3. Rise of silicene: A competitive 2D material

4. Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium

5. Two-dimensional gas of massless Dirac fermions in graphene

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