Surface State Mediated Electron Transfer Across the N-Type SiC/Electrolyte Interface-Reference-Cited by-同舟云学术

Surface State Mediated Electron Transfer Across the N-Type SiC/Electrolyte Interface

Published:2016-03-21 Issue:12 Volume:120 Page:6524-6533
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Sachsenhauser Matthias¹,Sharp Ian D.²³,Stutzmann Martin¹,Garrido Jose A.⁴⁵

Affiliation:

1. Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany

2. Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

3. Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

4. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain

5. ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona, Spain

Funder

Deutsche Forschungsgemeinschaft

Office of Science

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b11569

Reference42 articles.

1. Semiconductor Electrochemistry

2. Direct biofunctionalization of semiconductors: A survey

3. Silicon carbide high-power devices

4. Silicon carbide MEMS for harsh environments

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