ReaxFF Reactive Force Field for Exploring Electronically Switchable Polarization in Zn1–xMgxO Ferroelectric Semiconductors-Reference-Cited by-同舟云学术

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ReaxFF Reactive Force Field for Exploring Electronically Switchable Polarization in Zn_1–xMg_xO Ferroelectric Semiconductors

Published:2024-07-23 Issue:30 Volume:128 Page:12534-12543
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Sepehrinezhad Alireza¹^ORCID,Baksa Steven M.²,Dabo Ismaila³^ORCID,van Duin Adri C.T.¹²⁴^ORCID

Affiliation:

1. Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

2. Materials Research Institute, Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

3. Department of Materials Science and Engineering, and Wilton E. Scott Institute for Energy Innovation, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States

4. Department of Mechanical Engineering, The Pennsylvania State University, University Park Pennsylvania 16802, United States

Funder

U.S. Department of Energy

AFOSR MURI

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.4c02233

Reference73 articles.

1. Hooker, M. W. Properties of PZT-based piezoelectric ceramics between-150 and 250 C, 1998.

2. Dielectric and structural analysis of hexagonal and tetragonal phase BaTiO3

3. Digital selection and analogue amplification coexist in a cortex-inspired silicon circuit

4. Ferroelectric field effect transistors: Progress and perspective

5. A million spiking-neuron integrated circuit with a scalable communication network and interface

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