A Model for Atomic Precision p-Type Doping with Diborane on Si(100)-2×1
Author:
Affiliation:
1. Center for Computing Research, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
2. Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
Funder
Sandia National Laboratories
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c08919
Reference40 articles.
1. First-Principle Study of Phosphine Adsorption on Si(001)-2 × 1–Cl
2. STM-Induced Desorption and Lithographic Patterning of Cl–Si(100)-(2 × 1)
3. Reaction of BCl3 with H- and Cl-terminated Si(1 0 0) as a pathway for selective, monolayer doping through wet chemistry
4. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
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