Stability, Electronic and Optical Properties of M4M′X4 (M = Ga or In, M′ = Si, Ge, or Sn, X = Chalcogen) Photovoltaic Absorbers-Reference-Cited by-同舟云学术

Stability, Electronic and Optical Properties of M4M′X4 (M = Ga or In, M′ = Si, Ge, or Sn, X = Chalcogen) Photovoltaic Absorbers

Published:2018-04-27 Issue:19 Volume:122 Page:10360-10364
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Meng Weiwei¹²^ORCID,Wang Xiaoming²^ORCID,Yan Yanfa²^ORCID,Wang Jianbo¹³^ORCID

Affiliation:

1. School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China

2. Department of Physics and Astronomy, Wright Center for Photovoltaic Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States

3. Science and Technology of High Strength Structural Materials Laboratory, Central South University, Changsha 410083, China

Funder

Solar Energy Technologies Program

National Natural Science Foundation of China

Division of Materials Research

Hubei Provincial Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b03706

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