Efficient Carrier Separation and Band Structure Tuning of Two-Dimensional C2N/GaTe van der Waals Heterostructure-Reference-Cited by-同舟云学术

Efficient Carrier Separation and Band Structure Tuning of Two-Dimensional C2N/GaTe van der Waals Heterostructure

Published:2018-06-25 Issue:28 Volume:122 Page:15892-15902
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Bai Yujie¹^ORCID,Zhang Qinfang¹,Xu Ning¹,Deng Kaiming²,Kan Erjun²^ORCID

Affiliation:

1. Physics Department, Yancheng Institute of Technology, Yancheng 224051, Jiangsu, P. R. China

2. Department of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, P. R. China

Funder

Natural Science Foundation of Jiangsu Province

Government of Jiangsu Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b04440

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5. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

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