Plasmon Localization by H-Induced Band Switching-Reference-Cited by-同舟云学术

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Plasmon Localization by H-Induced Band Switching

Published:2019-12-09 Issue:1 Volume:124 Page:958-967
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Mamiyev Z.¹²^ORCID,Sanna S.^ORCID,Ziese F.,Dues C.,Tegenkamp C.¹³^ORCID,Pfnür H.¹²^ORCID

Affiliation:

1. Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany

2. Laboratorium für Nano- und Quantenengineering (LNQE), Leibniz Universität Hannover, Schneiderberg 39, 30167 Hannover, Germany

3. Institut für Physik, Technische Universität Chemnitz, Reichenhainer Straße 70, 09126 Chemnitz, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.9b10688

Reference61 articles.

1. Colloquium: Electronic instabilities in self-assembled atom wires

2. Damping pathways of mid-infrared plasmons in graphene nanostructures

3. Plasmon dispersion and damping in electrically isolated two-dimensional charge sheets

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