Atomic Layer Deposition of Gallium Sulfide Films Using Hexakis(dimethylamido)digallium and Hydrogen Sulfide-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Gallium Sulfide Films Using Hexakis(dimethylamido)digallium and Hydrogen Sulfide

Published:2014-01-02 Issue:2 Volume:26 Page:1029-1039
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Meng Xiangbo¹,Libera Joseph A.¹,Fister Timothy T.¹,Zhou Hua¹,Hedlund Jenny K.¹,Fenter Paul¹,Elam Jeffrey W.¹

Affiliation:

1. Energy Systems Division, ‡Chemical Sciences and Engineering Division, and §Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, United States

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm4031057

Reference73 articles.

1. Metal sulfide nanostructures: synthesis, properties and applications in energy conversion and storage

2. Unsupported transition metal sulfide catalysts: From fundamentals to industrial application

3. Catalytic Properties of Single Layers of Transition Metal Sulfide Catalytic Materials

4. Beyond Intercalation-Based Li-Ion Batteries: The State of the Art and Challenges of Electrode Materials Reacting Through Conversion Reactions

5. Influence of the synthesis conditions on gallium sulfide thin films prepared by modulated flux deposition

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