First Principles Study of NO and NNO Chemisorption on Silicon Carbide Nanotubes and Other Nanotubes-Reference-Cited by-同舟云学术

First Principles Study of NO and NNO Chemisorption on Silicon Carbide Nanotubes and Other Nanotubes

Published:2008-09-12 Issue:10 Volume:4 Page:1690-1697
ISSN:1549-9618
Container-title:Journal of Chemical Theory and Computation
language:en
Short-container-title:J. Chem. Theory Comput.

Author:

Gao Guohua¹,Kang Hong Seok¹

Affiliation:

1. Department of Nano and Advanced Materials, College of Engineering, Jeonju University, Hyoja-dong, Wansan-ku, Chonju, Chonbuk 560-759, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry,Computer Science Applications

Link

https://pubs.acs.org/doi/pdf/10.1021/ct800273c

Reference27 articles.

1. SiC – a semiconductor for high-power, high-temperature and high-frequency devices

2. Formation of Silicon Carbide Nanotubes and Nanowires via Reaction of Silicon (from Disproportionation of Silicon Monoxide) with Carbon Nanotubes

3. Structure and stability of SiC nanotubes

4. Computational designing of graphitic silicon carbide and its tubular forms

5. From Pure Carbon to Silicon−Carbon Nanotubes: An Ab-initio Study

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