Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films-Reference-Cited by-同舟云学术

Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films

Published:2004-10-23 Issue:24 Volume:16 Page:5162-5168
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Kukli Kaupo¹,Ritala Mikko¹,Pilvi Tero¹,Sajavaara Timo¹,Leskelä Markku¹,Jones Anthony C.¹,Aspinall Helen C.¹,Gilmer David C.¹,Tobin Philip J.¹

Affiliation:

1. University of Helsinki, Department of Chemistry, P.O. Box 55, FIN-00014 University of Helsinki, Finland, Accelerator Laboratory, P.O. Box 43, FIN-00014 University of Helsinki, Finland, Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, United Kingdom, Epichem Limited, Power Road, Bromborouigh, Wirral, Merseyside, CH62 3QF, United Kingdom, and Freescale Semiconductor, Inc., Advanced Products Research and Development, 3501 Ed Bluestein Blvd., Austin, Texas 78721

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm0401793

Reference61 articles.

1. Preparation of zinc oxide/metal oxide multilayered thin films for low-voltage varistors

2. Electrical properties and stability of praseodymium oxide-based ZnO varistor ceramics doped with Er2O3

3. Electronic Band Structure and Photocatalytic Activity of Ln2Ti2O7 (Ln = La, Pr, Nd)

4. Praseodymium oxide coated anode for organic light-emitting diode

5. Improvement of Al/GaAs Schottky Junction Characteristics Using a Thin Praseodymium Interlayer

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